Fast bias for power amplifier gating in a TDMA application

Details Fast bias for power amplifier gating in a TDMA application Fast bias for power amplifier gating in a TDMA application

2006-06-08

2008-10-21

Pascal, Robert (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including particular biasing arrangement

Reexamination Certificate

active

07439810

ABSTRACT:
RF amplifier bias system for TDMA application. A bias circuit (200) is coupled to an RF power amplifier (201) circuit. The bias circuit includes a charge pump/sink circuit (215) a voltage reference circuit (204) and voltage scaling circuit (208, 210, 214). The bias system provides fast response time when transitioning between various bias voltage applied to an FET RF transistor (244).

REFERENCES:
patent: 5334979 (1994-08-01), Hatakeyama
patent: 6218904 (2001-04-01), Panther
patent: 6492875 (2002-12-01), Luo et al.
patent: 7190220 (2007-03-01), Forstner et al.
patent: 7230492 (2007-06-01), Benelbar
patent: 03211903 (1991-09-01), None

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