Fast atom beam source

Details Fast atom beam source Fast atom beam source

1992-09-11

1997-06-17

Berman, Jack I.

Radiant energy

Electrically neutral molecular or atomic beam devices and...

H05H 302

Patent

active

056400098

ABSTRACT:
A small fast atom beam source is capable of neutralizing ions at a high rate and of emitting a fast atom beam efficiently and with excellent directivity. A gas is introduced into the area between a plate-shaped anode having a plurality of atom emitting holes and a plate-shaped anode facing the cathode. A gas discharge is induced by a DC high-voltage power supply, thereby forming a plasma. Ions that are produced by the plasma are accelerated toward the cathode and neutralized in and near the atom emitting holes, which have lengths larger than the diameters thereof, thereby emitting a fast atom beam at a high rate of neutralization.

REFERENCES:
patent: 5055672 (1991-10-01), Nagai
patent: 5216241 (1993-06-01), Hatakeyama et al.
Shimokawa, F. et al., "Reactive-fast-atom beam etching of GaAs using C1.sub.2 gas", J. Appl. Phys. 66(6), 15 Sep. 1989, pp. 2613-2618.
Nagai, K., "A FAB Source for SIMS--Studies of a Gas Discharge Type FAB Source--", an NTT Applied Electronics Laboratories Publication, Oct. 1988, pp. 29-34.

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