Fast and compact SCR ESD protection device for high-speed pins

Details Fast and compact SCR ESD protection device for high-speed pins Fast and compact SCR ESD protection device for high-speed pins

2006-02-28

2008-12-30

Leja, Ronald W (Department: 2836)

Electricity: electrical systems and devices

Safety and protection of systems and devices

Load shunting by fault responsive means

Reexamination Certificate

active

07471493

ABSTRACT:
A pair of SCR devices connected in antiparallel between first and second nodes. Each SCR device comprises an NPN and a PNP bipolar transistor. Reverse-biased Zener diodes are used for triggering the NPN bipolar transistor in each SCR device when it breaks down in an ESD event. Advantageously, additional Zener diodes are provided for pre-charging the PNP transistor of each SCR device at the same time, thereby reducing the delay time for turning on the PNP bipolar transistor. In addition, the breakdown current of the Zener diodes is preferably maximized by reducing the P-well and N-well resistance of the SCRs. This is achieved by connecting external resistances between the base of each bipolar transistor and the node to which the emitter of the transistor is connected.

REFERENCES:
patent: 5103154 (1992-04-01), Dropps et al.
patent: 5663860 (1997-09-01), Swonger
patent: 5856904 (1999-01-01), Pelly et al.
patent: 6873505 (2005-03-01), Chen et al.

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