Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1995-08-25
1997-06-17
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 84, 257 85, 257184, 359245, 359251, 359252, 359282, 359283, H01L 2906, H01L 310328, H01L 310336
Patent
active
056400217
ABSTRACT:
Novel optical modulators and other high performance Faraday-Stark magneto-optoelectronic devices (MOE's) are disclosed that allow electrical adjusting of the polarization (or other optical properties) of an excitation light at high modulation bandwidth and deep modulation depths through the Faraday-Stark effect. The high performance Faraday-Stark magneto-optoelectronic devices of the present invention include a Faraday-Stark cell having at least one quantum well formed in a semiconductor or other material defining transition energies and wavefunction overlaps that correspond to the presence and/or magnitude of magnetic and electric fields that may be present to the quantum wells of the cell. In exemplary modulator embodiments, the transition energies and wavefunction overlaps are electrically adjustable by applying an E field to transparent, opaque or p-i-n diode electrodes and the excitation light, applied to the cell either directly, reflectively or by means of a waveguide, is rotated thereby at high bandwidth and wide modulation depth. Temperature, electric and magnetic field sensors may be provided as well.
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Excitonic Faraday Rotation in CdTe-Cd.sub.1-x Mn.sub.x Te Quantum Wells, by Buss et al., Solid State Communications, V. 94, No. 7, (pp. 543-548, May, 1995).
High-Speed Optical Modulation with GaAs/GaAlAs Quantum Wells in a p-i-n Diode Structure, by Wood et al., Appl. Phys. Lett. 44 (1), (pp. 16-18, Jan. 1984).
Multiple Quantum Well (MQW) Waveguide Modulators by Wood et al., J. Lightwave Technology, V. 6, No. 6 (pp. 743-757, Jun. 1988).
Electron-Hole Separation in 2-Dimensional Electron System Induced by Electric Fields, by Plentz et al., submitted to Phys. Rev. B, Rapid Communications, (Jun. 1995).
Observation Of Room-Temperature Blue Shift and Bistability In a Strained InGaAs-GaAs <111> Self-Electro-Optic Effect Device, by Goossen et al., Appl. Phys. Lett. 56(8), (pp. 715-717, Feb. 1990).
Faraday-Stark Electrophotonic Effect, Lee et al., coauthored by the inventors of the instant invention, which was orally delivered at a conference entitled "22nd International Symposium on Compound Semiconductors," Aug. 28-Sep. 2, 1995, Cheju Island, Korea.
Heiman Donald Eugene
Lee Zachary Ka Fai
Durigon Albert Peter
Massachusetts Institute of Technology
Mintel William
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