Faraday rotator with antireflection film

Details Faraday rotator with antireflection film Faraday rotator with antireflection film

1997-07-23

1999-07-06

Epps, Georgia

Optical: systems and elements

Optical modulator

Light wave temporal modulation

359283, 359324, 359586, G02B 530, G02B 111, G02B 108

Patent

active

059204206

ABSTRACT:
A Faraday rotator is formed of a bismuth-substituted iron garnet single crystal film on which an antireflection film is formed. The antireflection film includes first, second, and third layers. The first layer is a layer of silicon dioxide. The second layer is a layer of tantalum pentoxide. The third layer is a layer of silicon dioxide. The first, second, and third layers are formed in this order from the atmosphere side on the bismuth-substituted iron garnet single crystal film. The antireflection film may be formed on both of opposing surfaces of the single crystal film.

REFERENCES:
patent: 4637953 (1987-01-01), Sawamura et al.
patent: 5245471 (1993-09-01), Iwatsuka et al.
patent: 5661596 (1997-08-01), Biro et al.
patent: 5764416 (1998-06-01), Rahn

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