Faraday cage for barrel-style plasma etchers

Details Faraday cage for barrel-style plasma etchers Faraday cage for barrel-style plasma etchers

1993-02-26

1994-11-08

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118722, 118723FI, C23F 102

Patent

active

053623533

ABSTRACT:
An improved Faraday Cage is provided for use in reducing ion damage to semiconductor wafers during plasma etching. The improved Faraday Cage consists of a cylindrical metallic chamber having a cap at one or more ends. Semiconductor wafers are placed within the Cage and the Cage is suitably disposed within a plasma etcher. The caps substantially reduce the amount of harmful radiation which can enter the Cage and thereby ion damage to the wafers contained therein. The improved Faraday Cage can be conveniently integrated with a barrel-style plasma etcher by securing one of the Cage caps to the door of the plasma etcher such that opening and closing the door serves to disengage and engage one of the caps from the Cage.

REFERENCES:
patent: 3066044 (1962-11-01), Samuel
patent: 4203387 (1980-05-01), McMullen
patent: 4303467 (1981-12-01), Scornavacca
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patent: 4989540 (1991-02-01), Fuse
patent: 5099100 (1992-03-01), Bersin
patent: 5217560 (1993-06-01), Kurono
patent: 5236548 (1993-08-01), Stadler
C. J. Mogab, VLSI Technology (McGraw-Hill Book Co. 1988), pp. 303-309.
Brian Chapman, Glow Discharge Processes (John Wiley & Sons 1980), pp. 322-323.
Sorab K. Ghandhi, VLSI Fabrication Principles (John Wiley & Sons 1983), pp. 499-501.

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