Facet etch for improved step coverage of integrated circuit cont

Details Facet etch for improved step coverage of integrated circuit cont Facet etch for improved step coverage of integrated circuit cont

1997-10-27

1999-01-19

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438666, 438742, 257748, 257750, H01L 2100

Patent

active

058613447

ABSTRACT:
Disclosed is a method for providing improved step coverage of contacts with conductive materials, and particularly metals. A conductive layer is deposited over an insulating layer, either before or after contact opening formation. After both conductive layer deposition and contact formation, a facet etch is performed to slope the conductive layer overlying the contact lip while depositing material from the conductive layer into the lower corner of the contact, where coverage has traditionally been poor. A second conductive layer may then be deposited into the contact to supplement coverage provided by the first conductive layer and the facet etch.

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