Facedown-type semiconductor pressure sensor with spacer

Electrical resistors – Strain gauge type – Fluid- or gas pressure-actuated

Patent

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Details

338 42, G01L 122

Patent

active

048810568

ABSTRACT:
A facedown-type semiconductor pressure sensor has a Si sensing element including a diaphragm, a spacer, and a piezoresistive device embedded in the diaphragm, and a pedestal. The spacer, which is positioned between the semiconductor substrate and the pedestal, has a photolitho-graphically etched hole such that the sensing element, the hole and the pedestal define a sealed chamber. The sealed pressure chamber is substantially aligned with the diaphragm.

REFERENCES:
patent: 4068206 (1978-01-01), Popp

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