Fabrication process of static induction transistor and solid-sta

Details Fabrication process of static induction transistor and solid-sta Fabrication process of static induction transistor and solid-sta

1983-12-14

1986-06-24

Roy, Upendra

Metal treatment

Compositions

Heat treating

29571, 29572, 29576B, 148187, 357 22, 357 91, H01L 21265, H01L 2978

Patent

active

045966052

ABSTRACT:
In a process for fabricating a static induction transistor having a gate region which is formed in a semiconductor layer including a channel region, ions of an impurity element are implanted into the semiconductor layer from the surface thereof to form the gate region. Ions of an element lighter than the impurity element are implanted into the gate region from the surface of the semiconductor layer in such a way that the concentration of the light element exhibits a plurality of profiles in the depth direction of the semiconductor layer. The semiconductor layer is annealed at a relatively low temperature after the two implanting steps to form the gate region in the semiconductor layer. A solid-state image sensor device is fabricated by using the static induction transistor as a picture cell.

REFERENCES:
patent: 4004950 (1977-01-01), Baruch et al.
patent: 4133701 (1979-01-01), Greenstein et al.
patent: 4216029 (1980-08-01), Nishizawa et al.
patent: 4358323 (1982-09-01), Wallace
patent: 4364072 (1982-12-01), Nishizawa
patent: 4406052 (1983-09-01), Cogan
patent: 4435897 (1984-03-01), Kuroda et al.
Akutagawa et al., Jour. Appl. Phys., 50 (1979), 777.

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