Fabrication process of semiconductor pressure sensor for sensing

Details Fabrication process of semiconductor pressure sensor for sensing Fabrication process of semiconductor pressure sensor for sensing

1991-06-25

1992-09-08

Thomas, Tom

Fishing, trapping, and vermin destroying

437225, 437249, 437901, 73727, H01L 21265, G01L 906

Patent

active

051458101

ABSTRACT:
A fabrication process of a semiconductor pressure sensor is described. A first recess and a second recess, which is deeper than the first recess, are formed in a first surface of a semiconductor substrate. A reinforcement layer is formed on the entire first surface. A second surface of the semiconductor substrate is then polished until a part of the second recess appears on a side of the second surface. After that, a resistance element is formed in the second surface at a region opposing the first recess.

REFERENCES:
patent: 3357801 (1967-12-01), Jones, Jr.
patent: 4523964 (1985-06-01), Wilmer et al.
patent: 4618397 (1986-10-01), Shimizu et al.
patent: 4808549 (1989-02-01), Mikkor et al.
"One-chip Integrated Pressure Sensor", T. IEE Japan, 109-C(12), 855-861, (1989) by S. Sugiyama et al.
"Yudentai Bunri Gijutsu (Dielectric Isolation Technology)", T. Usui et al., Oki Denki Kenkyu Kaihatsu (R & D at Oki Electric Industry Co., Ltd.), 51(1-122), 71-78 (Mar., 1984).

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