Fabrication process of semiconductor device

Details Fabrication process of semiconductor device Fabrication process of semiconductor device

2007-11-01

2010-10-19

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C257S295000, C257SE27104, C257SE29164, C257SE29272, C257SE21108, C257SE21436, C257SE21664

Reexamination Certificate

active

07816150

ABSTRACT:
A method for fabricating a semiconductor device includes the steps of forming a first ferroelectric film over a lower electrode, crystallizing the first ferroelectric film, forming a second ferroelectric film in an amorphous state over the first ferroelectric film so as to fill voids existing on a surface of the first ferroelectric film, and forming an upper electrode over the second ferroelectric film of the amorphous state, wherein the crystallizing step of the first ferroelectric film is conducted by a thermal annealing process at a temperature of 585° C. or higher.

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