Fabrication process of semiconductor device

Details Fabrication process of semiconductor device Fabrication process of semiconductor device

1997-05-13

2000-07-25

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

438752, 438753, H01L 21302

Patent

active

060936576

ABSTRACT:
A compound semiconductor wafer is dipped into water at a temperature of 5.degree. C. for about 10 seconds to preliminarily adjust to a temperature substantially equal to a temperature of etching agent. Next, with taking a photoresist as a mask, etching is performed at 5.degree. C. employing a mixture of 50 wt % of citric acid solution and 30 wt % of hydrogen peroxide solution in a volume ratio of 3:1. Thereafter, gate metal is deposited, and the mask and excessive metal are removed by a lift-off or other method to fabricate a semiconductor device.

REFERENCES:
patent: 5374328 (1994-12-01), Remba et al.
patent: 5419808 (1995-05-01), Kitano
patent: 5468343 (1995-11-01), Kitano
patent: 5696035 (1997-12-01), Kitano
patent: 5783856 (1998-07-01), Smith et al.
patent: 5786234 (1998-07-01), Nagai et al.
patent: 5824186 (1998-10-01), Smith et al.
patent: 5904572 (1999-05-01), Lee et al.
patent: 5928964 (1999-07-01), Brankner
Tong et al., "A Comparative Study of Wet and Dry Selective Etching Processes for GaAS/AlGaAS/InGaAS Pseudomorphic", Journal of Electronic Materials vol. 21, No. 1, pp. 9-14, 1992.
Schneider et al., "Characteristics of nonselective GaAs/(Al,Ga)Aa heterostructure etching at very low etch", SPIE vol. 797, Advanced Processing of Semiconductor Devices, pp. 149-155, 1987.
Otsubo et al., "Preferential Etching of GaAs Through Photoresist Masks", J. Electochem. Soc., Solid-State Science And Technology, vol. 123, No. 6, pp. 676-680, 1976.
Tominaga et al., "Application of Selective Wet Etching for MODFET", The Institute of Electronics, Information and Communication Engineers, pp. 5-152, 1993.

Affiliated with

Also associated with

Rating

Fabrication process of semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication process of semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication process of semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1336319