Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Patent
1997-09-04
1999-11-09
Bowers, Charles
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
438 35, 438 39, 438 47, 372 50, 372102, 311314, 311321, H01S 3085
Patent
active
059813075
ABSTRACT:
A method of fabricating an optical semiconductor device includes the steps of irradiating a substrate by a first optical beam and a second optical beam such that the first and second optical beams form interference fringes on the substrate, exposing a resist film provided on the substrate by the interference fringes to form a resist pattern, and forming a diffraction grating pattern on the substrate in accordance with the interference fringes by using the resist pattern as a mask. The first and second optical beams are irradiated such that a wavefront of the first optical beam and a wavefront of the second optical beam intersect at an intersection line parallel to the substrate, and the irradiating step is conducted by refracting the first and second optical beams by an optical element having a smooth surface inclined with respect to a plane parallel to the substrate in the direction of the foregoing intersection line and further inclined in a perpendicular direction.
Bowers Charles
Christianson Keith
Fujitsu Limited
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