Fabrication process of a semiconductor device using a slurry con

Details Fabrication process of a semiconductor device using a slurry con Fabrication process of a semiconductor device using a slurry con

1996-07-02

1998-06-09

Niebling, John

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438692, 1566371, H01L 21463

Patent

active

057633258

ABSTRACT:
A slurry contains MnO.sub.2 or other manganese oxide as a primary component of abrasive particles. Further, a polishing process using such a manganese oxide abrasive and a fabrication process of a semiconductor device using such a polishing process are disclosed.

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patent: 5498565 (1996-03-01), Gocho et al.
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