Fabrication process of a semiconductor device including grinding

Details Fabrication process of a semiconductor device including grinding Fabrication process of a semiconductor device including grinding

1997-02-25

1999-11-09

Ahmad, Nasser

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

428 68, 438459, 438460, 438465, 438758, 438759, 438906, 438974, 438977, H01L 21304

Patent

active

059813911

ABSTRACT:
A method of fabricating a semiconductor device includes the steps of protecting a front surface of a semiconductor substrate by an adhesive medium, grinding a rear surface of the semiconductor substrate in a state that the front surface is protected by the adhesive medium, removing the adhesive medium from the rear surface, and heating the semiconductor substrate, after the step of removing, to a temperature higher than a thermal decomposition temperature of an adhesive provided on the adhesive medium.

REFERENCES:
patent: 5344524 (1994-09-01), Sharma

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