Fabrication process of a capacitor structure of semiconductor me

Details Fabrication process of a capacitor structure of semiconductor me Fabrication process of a capacitor structure of semiconductor me

1998-12-21

1999-11-30

Tsai, Jey

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

438240, H01G 706

Patent

active

059941537

ABSTRACT:
A capacitor structure of a semiconductor memory cell such as a FERAM has an upper electrode less susceptible a damage even by heat-treatment in a hydrogen gas atmosphere. The capacitor structure includes a lower electrode, a capacitor thin film formed of a ferroelectric thin film formed on the lower electrode, and an upper electrode formed on the capacitor thin film. The upper electrode is made of Ru.sub.1-x O.sub.x (0.1<x<0.64).

REFERENCES:
patent: 5366920 (1994-11-01), Yamamichi et al.
patent: 5496437 (1996-03-01), Desu et al.

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