Fabrication process involving semi-insulating material

Details Fabrication process involving semi-insulating material Fabrication process involving semi-insulating material

1987-02-24

1988-10-11

Roy, Upendra

Fishing, trapping, and vermin destroying

2504923, 324158R, H01L 21265, G01R 104

Patent

active

047771461

ABSTRACT:
Semi-insulating wafers such as semi-insulating gallium arsenide wafers are commonly utilized in the fabrication of semiconductor devices, e.g., lasers and optical detectors. The quality of wafer electrical properties is determined before device processing by an optical technique. In this technique a refractive index change is induced with incident light and the rate of decay of this refractive index change upon change of incident light intensity is monitored with a second beam. The rate of decay is directly related to electrical properties such as resistivity. Subsequent processing is then based on this measurement.

REFERENCES:
patent: 4332833 (1982-06-01), Aspnes et al.
patent: 4408884 (1983-10-01), Kleinknecht et al.
patent: 4456879 (1984-06-01), Kleinknecht
patent: 4496900 (1985-01-01), Di Stefano et al.
patent: 4575922 (1986-03-01), Nemiroff
patent: 4640002 (1987-02-01), Phillips et al.
D. S. Chemla, D. J. Eilenberger, and P. W. Smith, "Degenerate Four-Wave Mixing in Room-Temperature GaAs/GaAlAs Multiple Quantum Well Structures", Applied Physics Letters, vol. 42, No. 11, Jun. 1, 1983, pp. 925-927.
J. F. Nye, Physical Properties of Crystals, Oxford University Press, London, England, 1957.
J. I. Pankove, Optical Processes in Semiconductors, Dover Publications, Inc., New York, NY, 1971, pp. 62-67.
T. E. Van Eck, L. M. Walpita, W. S. C. Chang, and H. H. Wieder, "Franz-Keldysh Electrorefraction and Electroabsorption in Bulk InP and GaAs", Applied Physics Letters, vol. 48, No. 7, Feb. 17, 1986, pp. 451-453.
R. J. Coller, C. B. Burckhardt and Lawrence H. Lin, Optical Holography, Academic Press, New York, NY, 1971.
F. T. S. Yu, Introduction to Diffraction, Information Processing, and Holography, The Massachusetts Institute of Technology, Boston, MA, 1973.
A. M. Glass, "The Photorefractive Effect", Optical Engineering, vol. 17, No. 5, Sep.-Oct. 1978, pp. 470-479.
P. Dobrilla and J. S. Blakemore, "Optical Mapping of Residual Stress in Czochralski Grown GaAs", Applied Physics Letters, vol. 48, No. 19, May 12, 1986, pp. 1303-1305.
G. C. Valley and M. B. Klein, "Optimal Properties of Photorefractive Materials for Optical Data Processing", Optical Engineering, vol. 22, No. 6, Nov./Dec. 1983, pp. 704-711.
S. M. Sze, Physics of Semiconductor Devices, John Wiley & Sons, New York, NY, 1981.

Affiliated with

Also associated with

Rating

Fabrication process involving semi-insulating material does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication process involving semi-insulating material, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication process involving semi-insulating material will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1958219