Fabrication process for solid-state image pick-up device with CC

Details Fabrication process for solid-state image pick-up device with CC Fabrication process for solid-state image pick-up device with CC

1997-04-09

1999-05-18

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

H01L21/00

Patent

active

059044942

ABSTRACT:
At first, first transfer electrodes are formed selectively on a semiconductor substrate. Then, the surface of the first transfer electrodes are thermally oxidized at a temperature of 850.degree. to 950.degree. C. to form thermal oxide layers. After depositing a polycrystalline silicon layer over the substrate, rapid annealing is performed the first transfer electrodes, the thermal oxide layers and the polycrystalline silicon layer by a halogen lamp. Thus, after forming the polycrystalline silicon layer to be second transfer electrodes, annealing is performed by heating by lamp. Therefore, the thermal oxide layers can be efficiently heated by the irradiation heat from the polycrystalline silicon layer located upper side thereof and also from the first electrodes located at backside. Accordingly, the tolerance voltage of the thermal oxide layer can be improved and the thickness of the thermal oxide layer can be made thinner.

REFERENCES:
patent: 5424775 (1995-06-01), Kamisaka et al.
R.M. Anderson et al., "Evidence for surface asperity mechanism of . . . on polycrystalline silicon", Journal of Applied Physics, vol. 48, No. 11, Nov. 1977, pp. 4834-4836.
D.K. Brawn et al., "Ramp Breakdown Study . . . RAM's as a Function of Fabrication Parameters", J. Electrochem. Soc.: Solid-State Science and Technology, vol. 130, No. 7, Jul. 1983, pp. 1597-1603.
K. Shinada et al., "Reduction in Polysilicon Oxide Leakage Current by Annealing prior to Oxidation", J. Electrochem. Soc.: Solid-State Science and Technology, vol. 132, No. 9, Sep. 1995, pp. 2185-2188.

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