Fabrication process for semiconductor device

Details Fabrication process for semiconductor device Fabrication process for semiconductor device

1994-12-13

1996-04-16

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 47, 437 52, 437919, H01L 2170

Patent

active

055082220

ABSTRACT:
In a fabrication process for a semiconductor device, a core member is projected from a lower electrode layer and an insulation layer on a semiconductor substrate. Outer groups of cylindrical electrodes extending from the lower electrode layer are coaxially located around the core member. Thereafter, the core member is removed. With a space defined by removal of the core member, inner groups of cylindrical electrodes are formed utilizing the outer cylindrical electrodes and spacers therebetween as a united spacer defining an outer perimeter. The lower electrode layer, and the outer and inner groups of cylindrical electrodes form the lower electrodes of a capacitor in a memory call.

REFERENCES:
patent: 5084405 (1992-01-01), Fazan et al.
patent: 5126280 (1992-06-01), Chan et al.
patent: 5150276 (1992-09-01), Gonzalez et al.
patent: 5266512 (1993-11-01), Kirsch
patent: 5330614 (1994-07-01), Ahn
"Crown-Shaped Stacked-Capacitor Cell for 1.5-V Operation 64-Mb DRAM's," by Toru Kaga et al., IEEE Transactions on Electron Devices, vol. 38, No. 2, Feb. 1991, pp. 255-261.

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