Fabrication process for semiconductor bodies

Details Fabrication process for semiconductor bodies Fabrication process for semiconductor bodies

1979-04-02

1982-03-30

Hall, James R.

Plastic and nonmetallic article shaping or treating: processes

Formation of solid particulate material directly from molten...

By extrusion spraying or gravity fall through orifice

264 15, 264 85, 252 623R, B01J 202

Patent

active

043223796

ABSTRACT:
A system and method is provided for forming semiconductor tear-drop shaped bodies having minimal grain boundaries. Semiconductor material is melted in a capillary tube at the top of a tower, and forced under gas pressure through a nozzle. Separate semiconductor bodies are formed. They are passed through a free fall path over which a predetermined temperature gradient controls solidification of the bodies. The resultant bodies are tear-drop semiconductor bodies of near uniform size with minimal grain boundaries.

REFERENCES:
patent: 2038251 (1936-04-01), Vogt
patent: 3347958 (1967-10-01), Lundstrom
patent: 3347958 (1967-10-01), Lundstrom et al.

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