Fabrication process for Schottky diode with localized diode well

Fishing – trapping – and vermin destroying

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437 39, 437 59, 437904, 437178, 148DIG139, 148DIG140, H01L 21265

Patent

active

052683168

ABSTRACT:
An improved Schottky diode structure (4) is formed by retrograde diffusing an N.sup.+ concentration of relatively fast diffusing atoms, preferably Phosphorus atoms, to form a localized diode NWell (6) as the diode substrate for the diode. A buried diode layer (5) formed of relatively slow diffusing N type atoms, preferably Antimony atoms, underlies the diode NWell and electrically couples the diode junction (7) to the diode ohmic contact (9). A diode ohmic contact region (31) underlies the ohmic contact, further coupling the diode junction to the ohmic contact. Preferably, the diode junction is a Platinum-Silicide junction. The improved Schottky diode structure may be formed as part of a BICMOS integrated circuit fabrication process wherein the buried diode layer may be formed at the same time as a buried collector layer of a bipolar transistor structure, the diode NWell may be formed at the same time as an NWell of a CMOS transistor structure and the diode ohmic contact region may be formed at the same time as a collector sink region. In the BICMOS fabrication process the buried collector layer definition mask is also a buried diode layer definition mask, the retro NWell definition mask is also a diode NWell definition mask, the collector sink definition mask is also a diode ohmic contact region definition mask, and the BICMOS contacts definition mask is also a diode junction and ohmic contact definition mask.

REFERENCES:
patent: 3900344 (1975-08-01), Magdo
patent: 4233337 (1980-11-01), Friedman et al.
patent: 4669180 (1987-06-01), Thomas et al.
patent: 4799098 (1989-01-01), Ikeda et al.
patent: 4871686 (1989-10-01), Davies
patent: 4874714 (1989-10-01), Eklund
patent: 5021859 (1991-06-01), Ito et al.

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