Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-03-27
2007-03-27
Vinh, Lan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S675000, C438S705000, C451S129000, C361S764000, C360S317000, C324S1540PB
Reexamination Certificate
active
10675203
ABSTRACT:
A method for fabricating recording head sliders made from silicon substrates, is described. A Silicon wafer with a SiO2overcoat is provided, and a layer of material which is resistant to Deep Reactive Ion Etching (DRIE) is deposited on the SiO2overcoat. A patterned layer of material which is resistant to Reactive Ion Etching (RIE) is deposited on the layer of DRIE-resistant material to form a primary mask. RIE is used through the primary mask to pattern the SiO2overcoat layer and the layer of DRIE-resistant material. The primary mask is then removing to expose the layer of DRIE-resistant material which has now been patterned to form a secondary mask. DRIE is then used through the secondary mask to cut the Si wafer into pieces. Finally, the secondary mask is removed.
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Buchan Nicholas I.
Reiley Timothy C.
George Patricia A.
Guernsey Larry B.
Hitachi Global Storage Technologies - Netherlands B.V.
Intellectual Property Law Offices
Vinh Lan
LandOfFree
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