Fabrication process for laminar composite lateral field-emission

Etching a substrate: processes – Forming or treating optical article

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1566431, 1566571, 1566561, 216 25, 216 38, 216 67, 216 79, 437180, B44C 122

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056479980

ABSTRACT:
A process produces laminar composite lateral-emitter microelectronic devices especially useful in high-resolution field-emission display arrays. The devices incorporate a thin film laminar composite emitter structure including two or more films composed of materials having different etch rates. The laminar composite emitter consists of two or more ultra-thin layers, etched differentially so that a salient remaining portion of the most etch-resistant layer protrudes beyond the less etch-resistant layers to form a small-radius tip. The most etch-resistant layer is preferably diamond doped with one or more N-type dopants. An emitting edge of the laminar composite emitter is first formed by a directional trench etch. During or after fabrication of a trench portion of the structure, a small amount of supporting upper and/or lower layers is removed by a differential etch, such as a plasma etch. This leaves an ultra thin emitter edge or tip. For some combinations of materials, the differential etch process may include a chemical or electro-chemical etch, differential electropolishing, or differential ablution.

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