Fabrication process for high-frequency field-emission device

Electric lamp or space discharge component or device manufacturi – Process – Electrode making

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445 50, H01J 902

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056286635

ABSTRACT:
An improved high-frequency field-emission microelectronic device (10) has a substrate (20) and an ultra-thin emitter electrode (30) extending parallel to the substrate and having an electron-emitting lateral edge (110) facing an anode (40) across an emitter-to-anode gap (120). A control electrode (70), having a lateral dimension only a minor fraction of the emitter-to-anode gap width, is disposed parallel to the emitter and spaced apart from the emitter by an insulator (60) of predetermined thickness. A vertical dimension of the control electrode is only a minor fraction of the height of the anode. The control electrode may substantially surround a portion of the anode, spaced from the anode in concentric relationship. Inter-electrode capacitance between the emitter and the control electrode has only an extremely small value, consisting of only a very small area term and a very small fringing-field term, thus allowing operation of the microelectronic device at higher frequencies or switching speeds than heretofore. Inter-electrode capacitance between the control electrode and the anode also has only an extremely small value, thus improving higher frequency performance further. Devices having a plurality of control electrodes may also be made with improved inter-electrode capacitance. In order to consistently realize improved performance, a fabrication process (S1-S18) is specially adapted for manufacturing the device with small and precise dimensions and suitably precise alignment. The specially adapted process uses two sacrificial materials (150 and 160), one of which forms a temporary mandrel, and uses a conformal conductive layer to form each control electrode while automatically achieving the required alignment precision.

REFERENCES:
patent: 4578614 (1986-03-01), Gray et al.
patent: 4721885 (1988-01-01), Brodie
patent: 4728851 (1988-03-01), Lambe
patent: 4827177 (1989-05-01), Lee et al.
patent: 4901028 (1990-02-01), Gray et al.
patent: 4987377 (1991-01-01), Gray et al.
patent: 4990766 (1991-02-01), Simms et al.
patent: 5030895 (1991-07-01), Gray
patent: 5057047 (1991-10-01), Greene et al.
patent: 5144191 (1992-09-01), Jones et al.
patent: 5214347 (1993-05-01), Gray
patent: 5233263 (1993-08-01), Cronin et al.
patent: 5266155 (1993-11-01), Gray
patent: 5281890 (1994-01-01), Kane
patent: 5308439 (1994-05-01), Cronin et al.
patent: 5313140 (1994-05-01), Smith et al.
patent: 5320570 (1994-06-01), Kane
patent: 5382185 (1995-01-01), Gray et al.
C. A. Spindt "A Thin-Film Field-Emission Cathode" J. Applied Physics vol. 39, No. 7 (1968) pp. 3504-3505.
R. F. Greene et al. "Vacuum Microelectronics" Proc. IEDM 1989, (1.3.1-1.3.5), pp. 15-19.
H. H. Busta et al. "Lateral Miniaturized Vacuum Devices" Proc. IEDM 1989, (20.4.1-20.4.4), pp. 533-536.
J. E. Cronin et al. "Field Emission Triode Integrated-Circuit Construction Method" IBM Technical Disclosure Bulletin, vol. 32, No. 5B (Oct. 1989) pp. 242-243.
Brodie, "Physics1 Considerations in Vacuum Microelectronics Devices", IEEE Transactions on electron devices, vol. 36, No. 11 (Nov. 1989) pp. 2641-2644.
W. J. Orvis et al., "Modeling and Fabricating Micro-Cavity Integrated Vacuum Tubes," IEEE Transactions on Electron Devices, vol. 36, No. 11 (Nov. 1989) pp. 2651-2657.
W. N. Carr et al. "Vacuum Microtriode Characteristics" J. Vac. Sci. Technol. vol. A8, No. 4 (Jul./Aug. 1990), pp. 3581-3585.
S. Kanemaru et al. "Fabrication and Characterization of Lateral Field-Emitter Triodes" IEEE Transactions on electron Devices, vol. 38, No. 10 (Oct. 1991) pp. 2334-2336.
A. Kaneko et al. "Wedge-Shaped Field Emitter Arrays for Flat Display" IEEE Transactions on Electron Devices, vol. 38, No. 10 (Oct. 1991) pp. 2395-2397.
R. A. Lee et al., "Semiconductor Fabrication Technology Applied to Micrometer Valves" IEEE Transactions on Electron Devices, vol. 36, No. 11 (Nov. 1989) pp. 2703-2708.
Anonymous "Ionizable Gas Device Compatible with Integrated Circuit Device Size and Processing" reproduced from Research Disclosure No. 305 (Sep. 1989).
K. Derbyshire "Beyond AMLCDs: Field emission displays?" Solid State Technology, vol. 37, No. 11 (Nov. 1994) pp. 55-65.

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