Fabrication process for direct electron injection field-emission

Electric lamp or space discharge component or device manufacturi – Process – With assembly or disassembly

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313496, H01J 153

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active

056160615

ABSTRACT:
A lateral-emitter electron field-emission display device structure incorporates a thin-film emitter having an emitting edge and extending into in direct contact with a non-conducting or very high resistivity phosphor, thereby eliminating the gap between the emitter and the phosphor. Such a gap has been a part of all field-emission display devices in the prior art. The ultra-thin-film lateral emitter of the new structure is deposited in a plane parallel to the device's substrate and has an inherently small radius of curvature at its emitting edge. A fabrication process specially adapted to make the new structure includes a directional trench etch, which both defines the emitting edge and provides an opening to receive a non-conducting phosphor. This phosphor covers an anode and is automatically aligned in contact with the emitter edge. When an electrical bias voltage is applied between the emitter and anode, electrons are injected directly into the phosphor material from the emitter edge, exciting cathodoluminescence in the phosphor to emit light which is visible in a wide range of viewing angles. With minor variations in the fabrication process, a lateral-emitter electron field emission display device may be made with an extremely small emitter-phosphor gap, having a width less than 100 times the thickness of the ultra-thin emitter. Embodiments in which the gap width is zero are characterized as edge-contact light-emitting diodes (or triodes or tetrodes if they include control electrodes).

REFERENCES:
patent: 3789471 (1974-02-01), Spindt et al.
patent: 4721885 (1988-01-01), Brodie
patent: 4728851 (1988-03-01), Lambe
patent: 4827177 (1989-05-01), Lee et al.
patent: 5127990 (1992-07-01), Pribat et al.
patent: 5128063 (1992-07-01), Kamikubo
patent: 5141459 (1992-08-01), Zimmerman
patent: 5144191 (1992-09-01), Jones et al.
patent: 5203731 (1993-04-01), Zimmerman
patent: 5214347 (1993-05-01), Gray
patent: 5233263 (1993-08-01), Cronin et al.
patent: 5266155 (1993-11-01), Gray
patent: 5278475 (1994-01-01), Jaskie et al.
patent: 5281890 (1994-01-01), Kane
patent: 5289086 (1994-02-01), Kane
patent: 5290610 (1994-03-01), Kane et al.
patent: 5308439 (1994-05-01), Cronin et al.
patent: 5341063 (1994-08-01), Kumar
patent: 5382185 (1995-01-01), Gray et al.
patent: 5386172 (1995-01-01), Komatsu
patent: 5397957 (1995-03-01), Zimmerman
patent: 5442256 (1995-08-01), Moyer et al.
Katherine Derbyshire, "Beyond AMLCDs: Field emission displays?" Solid State Technology vol. 37 No. 11 (Nov. 1994) pp. 55-65.

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