Fabrication process for confined electron field emission device

Details Fabrication process for confined electron field emission device Fabrication process for confined electron field emission device

1999-03-25

1999-12-21

Bowers, Charles

Semiconductor device manufacturing: process

Electron emitter manufacture

438 22, 438 34, 445 24, H01L 21100, H01L 20100

Patent

active

060048301

ABSTRACT:
A lateral-emitter field emission device has a gate that is separated by an insulating layer from a vacuum- or gas-filled environment containing other elements of the device. For example, the gate may be disposed external to the microchamber. The insulating layer is disposed such that there is no vacuum- or gas-filled path to the gate for electrons that are emitted from a lateral emitter. The insulating layer disposed between the emitter and the gate preferably comprises a material having a dielectric constant greater than one. The insulating layer also preferably has a low secondary electron yield over the device's operative range of electron energies. For display applications, the insulating layer is preferably transparent. Emitted electrons are confined to the microchamber containing their emitter. Thus, the gate current component of the emitter current consists of displacement current only. This displacement current is a result of any change in potential of the gate relative to other elements such as, for example, relative to the emitter. Direct electron current from the emitter to the gate is prevented. An array of the devices comprises an array of microchambers, so that electron current from each emitter can reach only the anode in the same microchamber, even for diode devices lacking a control electrode. A fabrication process is specially adapted for fabricating the device and arrays of such devices.

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