Fabrication process for bonded wafer precision layer...

Details Fabrication process for bonded wafer precision layer... Fabrication process for bonded wafer precision layer...

2005-03-08

2005-03-08

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S014000, C438S406000, C438S692000, C438S706000

Reexamination Certificate

active

06864176

ABSTRACT:
A measurement method for the thinned thickness of the silicon wafer, wherein thickness inspection patterns are fabricated onto the silicon wafer substrate by anisotropic etching, and then the wafer is polished with a polisher; thus a wafer with desired thickness can be obtained after the polish is proceeded; the thickness of the upper wafer is determined by the said inspection patterns, then the wafer is sorted by thickness; thus it can be applied to the MEMS micromachined devices that in need of the wafer with such precise thickness.

REFERENCES:
patent: 5686364 (1997-11-01), Ohki et al.
patent: 5981400 (1999-11-01), Lo
patent: 6286685 (2001-09-01), Kononchuk et al.
patent: 6489624 (2002-12-01), Ushio et al.

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