Fabrication process for bipolar devices

Details Fabrication process for bipolar devices Fabrication process for bipolar devices

1984-12-20

1986-09-09

Roy, Upendra

Metal treatment

Compositions

Heat treating

29571, 29576B, 29576T, 148187, 148DIG10, 357 34, 357 91, H01L 21263, H01L 2122

Patent

active

046107304

ABSTRACT:
A method for the fabrication of semiconductor devices, particularly bipolar silicon devices, having ultra-shallow but relatively large junctions. The process is characterized by the use of relatively low temperatures for critical oxidations steps and for ion-implantation steps. The region implantations are performed at low temperature and the necessary annealing steps are deferred until all of the regions are in place. Then a single pulse-annealing step is employed, to minimize further movement of the region junctions. Processing-induced defects are thereby reduced to a minimum, and the process can be used to produce ultra-shallow junctions in a reliable and repeatable manner.

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