Fabrication process for a semiconductor pressure sensor for sens

Details Fabrication process for a semiconductor pressure sensor for sens Fabrication process for a semiconductor pressure sensor for sens

1995-06-02

1996-09-03

Kunemund, Robert

Fishing, trapping, and vermin destroying

437901, H01L 21465

Patent

active

055523471

ABSTRACT:
A semiconductor pressure sensor according to the present invention includes a semiconductor substrate having a first surface, a second surface opposite to the first surface and a recess formed in the first surface, the recess defining an interior surface including a bottom surface; and a diffusion region extending from the adjacency of the bottom surface to the second surface. A pressure-sensitive resistance of the semiconductor pressure sensor is formed in the vicinity of the bottom surface of a diaphragm. Therefore, the pressure-sensitive resistance can be formed so as to be brought into alignment with the position of the diaphragm after the formation of the diaphragm. Accordingly, the semiconductor pressure sensor, which does not cause a displacement in position between the diaphragm and the pressure-sensitive resistance and has excellent accuracy, can be easily fabricated. Further, since the pressure-sensitive resistance can be formed according to the shape of the diaphragm, the diaphragm can be reduced in size and fabricated in the form of a thin film.

REFERENCES:
patent: 4459855 (1984-07-01), Yamagami
patent: 4618397 (1986-10-01), Shimizu et al.
patent: 4672354 (1987-06-01), Kurtz
patent: 4773972 (1988-09-01), Mikkor
patent: 4885621 (1989-12-01), Yoder et al.
patent: 4897360 (1990-01-01), Guckel et al.
patent: 4977101 (1990-12-01), Yoder et al.

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