Fabrication process for a magnetic tunnel junction device

Details Fabrication process for a magnetic tunnel junction device Fabrication process for a magnetic tunnel junction device

2006-01-10

2006-01-10

Thompson, Craig A. (Department: 2813)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

Reexamination Certificate

active

06984529

ABSTRACT:
A method of fabricating a magnetic tunnel junction (MTJ) device is provided. A patterned hard mask is oxidized to form a surface oxide thereon. An MTJ stack is etched in alignment with the patterned hard mask after the oxidizing of the patterned hard mask. Preferably, the MTJ stack etch recipe includes chlorine and oxygen. Etch selectivity between the hard mask and the MTJ stack is improved.

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