Metal treatment – Compositions – Heat treating
Patent
1984-11-28
1987-03-10
Roy, Upendra
Metal treatment
Compositions
Heat treating
29576B, 29577C, 148175, 148187, 148DIG10, 357 34, 357 91, H01L 2704, H01L 2702
Patent
active
046489096
ABSTRACT:
A fabrication process for integrated circuits having linear bipolar transistors and other circuit elements. The process defines collector contact 32, base 34, and isolation 36 regions in one masking operation. Subsequent masking layers of photoresist 40, 42, 46 are used to shield selected regions during implantation of exposed regions. Circuit density is improved through the use of aluminum doped isolation regions 36. The base region is doped in a single ion implantation step, which is followed by low temperature deposition of a covering oxide layer 48.
REFERENCES:
patent: 3837936 (1974-09-01), Kraft
patent: 4018627 (1977-04-01), Polata
patent: 4021270 (1977-05-01), Hunt et al.
patent: 4106954 (1978-08-01), De Brebisson et al.
patent: 4111726 (1978-09-01), Chen
patent: 4208670 (1980-06-01), Hoffmann et al.
patent: 4272304 (1981-06-01), Komatsu
patent: 4377029 (1983-03-01), Ozawa
patent: 4391032 (1983-07-01), Schulte
patent: 4440580 (1984-04-01), Gahle
patent: 4456488 (1984-06-01), Gahle
patent: 4477965 (1984-10-01), Blossfeld
patent: 4512816 (1985-04-01), Ramde et al.
Egan Kulwant
Krishna Surinder
Colwell Robert C.
Fairchild Semiconductor Corporation
Phillips Stephen J.
Roy Upendra
Silverman Carl L.
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