Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
1998-07-01
2001-02-13
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S014000, C257S196000, C257S201000
Reexamination Certificate
active
06188081
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The invention is one concerning the fabrication process and structure of multiple negative-differential-resistance (ENDR) device, especially those of triple negative-differential-resistance (NDR) properties at room temperature and hexed NDR behavior at a low temperature of −105° C.
2. Description of the Prior Art
The NDR performances have been widely used in electronic circuits as a switching device, a microwave device, and/or an oscillator. At the same time, it can also be used in multiple-valued logic circuits to speed up data processing. Nevertheless, ordinary NDR devices show, in general, only one NDR phenomenon which limits the scope of use in practical electronic circuits.
SUMMARY OF THE INVENTION
In view of the about, the inventor fabricated a metal-insulator-semiconductor-insulator-metal (MISIM) MNDR device. This device is a new type AlGaAs/InGaAs (In
x
Ga
1−x
As)/GaAs metal-insulator (MNS) like MNDR switching device. By using the successive carriers accumulations at In
x
Ga
1−x
As step-graded subwells and the potential barrier lowing effect, the interesting MNDR phenomena can be obtained in this device. Furthermore, owing the potential redistributed effect, three and six NDR behaviors are obtained at room temperature and low temperature, respectively. The presence of MNDR phenomena may provide multiple stable operation state and the circuit complexity in practical applications.
The purpose of this invention is to develop a new AlGaAs/In
x
Ga
1−x
As)/GaAs MNDR switching device. From the successive carriers accumulations at In
x
Ga
1−x
As step-graded subwells and potential redistribution effect, three and six NDR phenomena are obtained at room temperature and low temperature, respectively. These characteristics show a good potentiality in multiple-valued logic circuit application. They can simplify the circuit design, extend the application area of logic circuits, and reduce the complexity in circuit design. This shows signification well (QW) structure is mostly used in laser device and heterostructure field-effect transistor. This invention has it used in NDR devices which results in the extension use of QW structure.
REFERENCES:
patent: 5302838 (1994-04-01), Roenker et al.
patent: 5489786 (1996-02-01), Chow et al.
patent: 5831297 (1998-11-01), Liu et al.
patent: 5869845 (1999-02-01), Vander Wagt et al.
Laih Lih-Wen
Liu Wen-Chau
Crane Sara
Dougherty & Troxell
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