Fabrication process and fabrication apparatus of SOI substrate

Details Fabrication process and fabrication apparatus of SOI substrate Fabrication process and fabrication apparatus of SOI substrate

1996-12-09

1999-03-02

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With a step of measuring, testing, or sensing

117 93, 117 94, 117 97, C30B 2522

Patent

active

058764976

ABSTRACT:
The conventional fabrication processes of SOI substrate employed wet etching for removing a porous single-crystal Si region, but wet etching involved difficulties in management of concentration for fabricating SOI substrates in high volume, which caused reduction in productivity.
Therefore, provided is a fabrication process of SOI substrate comprises a step of forming a non-porous single-crystal Si region on a surface of a porous single-crystal Si region of a single-crystal Si substrate having at least the porous single-crystal Si region, a step of bonding a support substrate through an insulating region to a surface of the non-porous single-crystal Si region, and a step of removing the porous single-crystal Si region, wherein the step of removing the porous single-crystal Si region comprises a step of performing dry etching in which an etch rate of the porous single-crystal Si region is greater than that of the non-porous single-crystal Si region.

REFERENCES:
patent: 5371037 (1994-12-01), Komehara et al.
patent: 5427052 (1995-06-01), Ohta
patent: 5445992 (1995-08-01), Tokunaga et al.
K. Sakaguchi, et al, "Exytremely High Selective Etching of Porous Si For Single Etch-Stop Bond-and-Etch-Back SOI", Int'l.Conf. on Solid State Devices and Materials, Aug. 23, 1994, pp. 259-261.
L. Vescan et al., "Low-Pressure Vapor-Phase Epitaxy of Silicon On Porous Silicon", Sep. 1988,Materials Letters, vol. 7, No. 3 pp. 94-95.
Nobuhiko Sato et al., "Epitaxial Growth On Porous Si For a New Bond and Etch-Back SOI", 1994, Proceedings of the International Symposium on Silicon Materials Science and Technology, pp. 443-453.

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