Fabrication of zero layer mask

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430 22, G03F 900

Patent

active

058374043

ABSTRACT:
A method of fabricating a universal zero layer photomask of an integrated circuit is disclosed. With this method, only one universal zero layer mask is required for all the integrated circuit products; thus, the production cost can be reduced. In this method, the alignment marks and one or more vernier patterns are located near the edge of the effective exposure field of the wafer which takes up only a very small area of the wafer. Furthermore, the zero layer layout of the product also places the alignment marks and the vernier patterns in the same corner as the photomask. During the alignment, the wafer moves back and forth in both X and Y directions so as to match the previously recorded alignment marks positions on the mask.

REFERENCES:
patent: 5376482 (1994-12-01), Hwang
patent: 5665495 (1997-09-01), Hwang

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