Fabrication of volcano-shaped field emitters by chemical-mechani

Details Fabrication of volcano-shaped field emitters by chemical-mechani Fabrication of volcano-shaped field emitters by chemical-mechani

1999-03-15

1999-12-28

Bowers, Charles

Semiconductor device manufacturing: process

Electron emitter manufacture

H01L 2100

Patent

active

060080647

ABSTRACT:
A method for fabrication of volcano-shaped field emitters forming low-cost, large area manufacturing of ungated and gated vertical field emitter arrays. Gate and emitter thin films are deposited onto a substrate on which arrays of posts have been previously fabricated. These conformal films cover the substrate, the sidewalls of the posts, and the post top surfaces or plateaus. By using chemical-mechanical polishing (CMP), some or all of the thin films are selectively removed, leaving an intermediate structure that, after removing a small portion of the gate-to-emitter insulating film, is suitable for cold electron emission. One embodiment discloses a method of forming these devices without resort to a planarization layer. A second embodiment discloses a methodology employing a planarization layer.

REFERENCES:
patent: 5038070 (1991-08-01), Bardai et al.
patent: 5874808 (1999-02-01), Busta et al.

Affiliated with

Also associated with

Rating

Fabrication of volcano-shaped field emitters by chemical-mechani does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication of volcano-shaped field emitters by chemical-mechani, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication of volcano-shaped field emitters by chemical-mechani will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2381647