Semiconductor device manufacturing: process – Electron emitter manufacture
Patent
1997-08-06
1999-07-27
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Electron emitter manufacture
H01L 2100
Patent
active
059305908
ABSTRACT:
A method for fabrication of volcano-shaped field emitters forming low-cost, large area manufacturing of ungated and gated vertical field emitter arrays. Gate and emitter thin films are deposited onto a substrate on which arrays of posts have been previously fabricated. These conformal films cover the substrate, the sidewalls of the posts, and the post top surfaces or plateaus. By using chemical-mechanical polishing (CMP), some or all of the thin films are selectively removed, leaving an intermediate structure that, after removing a small portion of the gate-to-emitter insulating film, is suitable for cold electron emission. One embodiment discloses a method of forming these devices without resort to a planarization layer. A second embodiment discloses a methodology employing a planarization layer.
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American Energy Services
Nguyen Tuan H.
Thompson Craig
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