Fabrication of visible wavelength vertical cavity surface emitti

Details Fabrication of visible wavelength vertical cavity surface emitti Fabrication of visible wavelength vertical cavity surface emitti

1998-03-04

1999-12-28

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

438 31, 372 43, H01S 302

Patent

active

060080671

ABSTRACT:
A VCSEL for emitting visible wavelength light including a GaInP substrate element, a first mirror stack with mirror pairs in a GaInP/AlInP material system lattice matched to a GaInP active region. The active region including a quantum well layer, a first barrier layer and a second barrier layer. The active region sandwiched between a first cladding region adjacent the first mirror stack and a second cladding region adjacent a second mirror stack. The second mirror stack lattice matched to the active region and having mirror pairs in a GaInP/AlInP material system. The VCSEL device capable of emitting light in the range of 635-650 nanometers.

REFERENCES:
patent: 5331656 (1994-07-01), Tanaka
patent: 5351256 (1994-09-01), Schneider et al.
R.P. Schneider et al., "MOVPE growth of InAIGaP-based visible vertical-cavity surface-emitting lasers", Journal of Crystal Growth 124, pp. 763-771 (no month given), 1992.

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