Fabrication of vertical SiGe base HBT with lateral collector con

Details Fabrication of vertical SiGe base HBT with lateral collector con Fabrication of vertical SiGe base HBT with lateral collector con

1994-06-01

1996-12-10

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 32, 437126, 437131, 437132, 148DIG10, 148DIG11, 148DIG72, 148DIG150, 257183, 257197, 257616, H01L 21265

Patent

active

055830595

ABSTRACT:
A SiGe-HBT structure for device integration on thin-SOI substrates is disclosed. The emitter and base regions are vertical while the collector contact is lateral in the otherwise MOS-like device structure. This allows one to integrate a SiGe base, the device capacitances are reduced, and the transistor can be combined with fully-depleted CMOS in a SOI-BiCMOS technology.

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