Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Having diverse electrical device
Reexamination Certificate
2007-11-20
2007-11-20
Nguyen, Cuong (Department: 2811)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Having diverse electrical device
C438S022000
Reexamination Certificate
active
11416985
ABSTRACT:
A method of fabricating vertical sidewalls on silicon (110) substrates for use in Si/SiGe photodetectors includes preparing a silicon (110) layer wherein the silicon (110) plane is parallel to an underlying silicon wafer surface. Masking the silicon (110) layer with mask sidewalls parallel to a silicon (111) layer plane and etching the silicon (110) layer to remove an un-masked portion thereof, leaving a patterned silicon (110) layer having vertical silicon (111) sidewalls. Removing the mask; growing SiGe-containing layers on the patterned silicon (110) layer; and fabricating a photodetector.
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Hsu Sheng Teng
Lee Jong-Jan
Maa Jer-Shen
Tweet Douglas J.
Nguyen Cuong
Sharp Laboratories of America Inc.
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