Fabrication of UV-sensitive back illuminated CCD image sensors

Details Fabrication of UV-sensitive back illuminated CCD image sensors Fabrication of UV-sensitive back illuminated CCD image sensors

1996-10-28

1999-08-17

Chang, Joni

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438928, H01L 2100

Patent

active

059406852

ABSTRACT:
The wafer thickness of a CCD front illuminated silicon wafer is reduced to about ten to twenty microns, the Al substrate is removed and a 5-35 nanometer silicon oxide layer is produced on the thinned back of the silicon wafer followed by implanting boron ions within the back surface to a depth up to about ten nanometers. Furnace annealing the wafer is now carried out, and the Al substrate is redeposited to enable the formation of gate contacts.

REFERENCES:
patent: 4822755 (1989-04-01), Hawkins et al.
patent: 5786236 (1998-07-01), Thompson et al.

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