Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Utility Patent
1999-02-18
2001-01-02
Bowers, Charles (Department: 2813)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
Utility Patent
active
06168966
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates generally to methods for fabricating image arrays within microelectronic fabrications. More particularly, the present invention relates to methods for fabricating with uniform areal sensitivity image arrays within microelectronic fabrications.
2. Description of the Related Art
Microelectronic fabrications are formed from microelectronic substrates over which are formed patterned microelectronic conductor layers which are separated by microelectronic dielectric layers. Within the general art of microelectronic fabrication, there exist microelectronic fabrications whose operation is based solely upon electrical signal storage and processing characteristics of microelectronic devices and microelectronic circuits formed upon a microelectronic substrate. Examples of such microelectronic fabrications typically include semiconductor integrated circuit microelectronic fabrications and ceramic substrate packaging microelectronic fabrications. Similarly, there also exists within the general art of microelectronic fabrication microelectronic fabrications whose operation is predicated upon a codependent transduction, storage and/or processing of optical and electrical signals while employing optoelectronic microelectronic devices formed upon a microelectronic substrate. Examples of such optoelectronic microelectronic fabrications typically include, but are not limited to: (1) solar cell optoelectronic microelectronic fabrications, as well as; (2) image array optoelectronic microelectronic fabrications, such as but not limited to: (a) sensor image array optoelectronic microelectronic fabrications (i.e. color filter sensor image arrays), as well as: (b) display image array optoelectronic microelectronic fabrications (i.e. flat panel display image arrays). Sensor image array optoelectronic microelectronic fabrications find common usage in advanced consumer products such as digital cameras, while display image array optoelectronic microelectronic fabrications are well recognized and commonly employed as visual interface elements within mobile computers.
While the level of complexity and integration of both purely electronic microelectronic fabrications and optoelectronic microelectronic fabrications continues to increase, fabrication of advanced optoelectronic microelectronic fabrications often provides unique fabrication challenges insofar as fabrication of advanced optoelectronic microelectronic fabrications requires attention to both the optical properties and the electrical properties of materials which are employed in forming such advanced optoelectronic microelectronic fabrications. For example, of the problems which are commonly encountered when fabricating advanced image array optoelectronic microelectronic fabrications, problems in achieving uniform areal sensitivity are often encountered.
It is thus towards the goal of forming advanced image array optoelectronic microelectronic fabrications with uniform areal sensitivity that the present invention is directed.
Various optoelectronic microelectronic fabrication methods and/or resulting optoelectronic microelectronic fabrications have been disclosed in the art of optoelectronic microelectronic fabrication for forming optoelectronic microelectronic fabrications with enhanced properties.
For example, Okamoto et al., in U.S. Pat. No. 5,276,540, discloses an active matrix thin film transistor (TFT) display image array optoelectronic microelectronic fabrication with reduced step height related defects typically encountered incident to fabricating a conductor layer shunt connecting an additional capacitance portion of a pixel electrode with a non-additional capacitance portion of the pixel electrode within the active matrix thin film transistor (TFT) display image array optoelectronic microelectronic fabrication. To realize the foregoing object, the active matrix thin film transistor (TFT) display image array optoelectronic microelectronic fabrication employs a pixel electrode of dimensions which completely cover the conductor layer shunt.
In addition, Song et al., in U.S. Pat. No. 5,672,519, discloses a method for fabricating a diode sensor image array optoelectronic microelectronic fabrication with enhanced optical precision when fabricating the diode sensor image array optoelectronic microelectronic fabrication. The method employs when fabricating the diode sensor image array optoelectronic microelectronic fabrication a stripe microlens having a flat top section rather than a stripe microlens having a convex top section as is more conventionally employed within diode sensor image array optoelectronic microelectronic fabrication.
Further, Zavracky et al., in U.S. Pat. No. 5,705,424, discloses a method for forming an active matrix thin film transistor (TFT) display image array optoelectronic microelectronic fabrication with enhanced switching speed. The method employs when forming the active matrix thin film transistor (TFT) display image array optoelectronic microelectronic fabrication electrical interconnect layers which are formed employing a monocrystalline silicon material rather than an amorphous silicon material as is more conventionally employed when fabricating active matrix thin film transistor (TFT) display image array optoelectronic microelectronic fabrications.
Finally, Wake, in U.S. Pat. No. 5,756,239, discloses a method for fabricating, with reduced process complexity, a color filter diode sensor image array optoelectronic microelectronic fabrication. The method employs when forming a series of patterned color filter layers from a corresponding series of blanket color filter layers which comprise the color filter diode sensor image array optoelectronic microelectronic fabrication a corresponding series of patterned photoresist layers which are chemically hardened against etching within an oxygen plasma which is employed for forming the series of patterned color filter layers from the series of blanket color filter layers.
Desirable in the art of optoelectronic microelectronic fabrication are additional methods and materials which may be employed for forming image array optoelectronic microelectronic fabrications with both uniform areal sensitivity.
It is towards that goal that the present invention is directed.
SUMMARY OF THE INVENTION
A first object of the present invention is to provide a method for forming an image array optoelectronic microelectronic fabrication.
A second object of the present invention is to provide a method for forming an image array optoelectronic microelectronic fabrication in accord with the first object of the present invention, where the image array optoelectronic microelectronic fabrication is formed with uniform areal sensitivity.
A third object of the present invention is to provide an image array optoelectronic microelectronic fabrication in accord with the first object of the present invention and the second object of the present invention, which method is readily commercially implemented.
In accord with the objects of the present invention, there is provided by the present invention a method for forming an image array optoelectronic microelectronic fabrication, and an image array optoelectronic microelectronic fabrication fabricated in accord with the method. To practice the method of the present invention, there is first provided a substrate. There is then formed over the substrate in a plane parallel to the substrate a bidirectional array of active image array optoelectronic microelectronic pixel elements. There is also formed over the substrate in the plane parallel to the substrate and contiguously extending from the bidirectional array of active image array optoelectronic microelectronic pixel elements an annular array of buffer image array optoelectronic microelectronic pixel elements.
There is provided by the present invention a method for forming an image array optoelectronic microelectronic fabrication, where the image array optoelectronic microelectronic fabrication is formed with uniform areal sen
Fan Yang Tung
Lee Chih-Hsiung
Ackerman Stephen B.
Bowers Charles
Christianson Keith
Saile George O.
Taiwan Semiconductor Manufacturing Company
LandOfFree
Fabrication of uniform areal sensitivity image array does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Fabrication of uniform areal sensitivity image array, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication of uniform areal sensitivity image array will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2478288