Fabrication of two-part emitter for gated field emission device

Details Fabrication of two-part emitter for gated field emission device Fabrication of two-part emitter for gated field emission device

1995-04-20

1997-12-30

Saadat, Mahshid D.

Electric lamp or space discharge component or device manufacturi

Process

Electrode making

445 24, 257 10, H01J 900, H01J 904, H01L 2986, H01L 2912

Patent

active

057022810

ABSTRACT:
A two-part field emission structure, and a method for making such a structure, is described. A substrate is provided having a first conductive layer thereon, a first insulating layer over the first conductive layer, a second conductive layer over the first insulating layer, and an opening formed in the first insulating and second conductive layers. A sacrificial layer is formed over the second conductive layer. A bottom portion of the field emitter structure is formed in the opening, by vertical deposition of a conductive material, whereby a third conductive layer, having a collimated channel over the bottom portion, is formed over the sacrificial layer. The formation of the field emitter structure is completed by vertical deposition of a tip material on to the top of the bottom portion of the field emitter structure, whereby a top conductive layer is formed over the third conductive layer. Lastly, the sacrificial layer, the third conductive layer, and the top conductive layer are removed. An optional interface adhesion layer is formed between the bottom portion of the field emitter structure and the tip.

REFERENCES:
patent: 3755704 (1973-08-01), Spindt et al.
patent: 5064396 (1991-11-01), Spindt
patent: 5258685 (1993-11-01), Jaskie et al.
patent: 5341063 (1994-08-01), Kumar
patent: 5480843 (1996-01-01), Park et al.

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