Fabrication of trenches with multiple depths on the same...

Details Fabrication of trenches with multiple depths on the same... Fabrication of trenches with multiple depths on the same...

2007-03-13

2007-03-13

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S427000, C438S444000, C438S700000, C438S703000, C438S734000, C438S749000, C438S750000, C438S751000, C438S756000, C438S757000, C438S508000, C257SE21579

Reexamination Certificate

active

10931605

ABSTRACT:
Dual trench depths are achieved on the same wafer by forming an initial trench having a depth corresponding to the difference in final depths of the shallow and deep trenches. A second mask is used to open areas for the deep trenches over the preliminary trenches and for the shallow trenches at additional locations. Etching of the shallow and deep trenches then proceeds simultaneously.

REFERENCES:
patent: 6146970 (2000-11-01), Witek et al.
patent: 6492270 (2002-12-01), Lou
patent: 6673635 (2004-01-01), Hellig et al.
patent: 6940170 (2005-09-01), Parikh
patent: 2003/0077875 (2003-04-01), Mandelman et al.

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