Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2005-03-08
2005-03-08
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S700000, C438S703000, C438S424000, C438S749000, C438S750000, C438S751000
Reexamination Certificate
active
06864152
ABSTRACT:
Dual trench depths are achieved on the same wafer by forming an initial trench having a depth corresponding to the difference in final depths of the shallow and deep trenches. A second mask is used to open areas for the deep trenches over the preliminary trenches and for the shallow trenches at additional locations. Etching of the shallow and deep trenches then proceeds simultaneously.
REFERENCES:
patent: 6171967 (2001-01-01), Jun
patent: 6673635 (2004-01-01), Hellig et al.
patent: 20030077875 (2003-04-01), Mandelman et al.
Defibaugh Dodd
Gopinath Venkatesh P.
Hornback Verne
Le Ynhi
Lin Hong
Beyer Weaver & Thomas LLP
Fourson George
LSI Logic Corporation
Pham Thanh V
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