Fabrication of transistors having specifically paired dopants

Details Fabrication of transistors having specifically paired dopants Fabrication of transistors having specifically paired dopants

1980-02-21

1981-04-21

Dean, R.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29578, 148187, 148188, 357 34, 357 63, 357 88, 357 90, H01L 21225, H01L 2936

Patent

active

042630673

ABSTRACT:
A semiconductor device comprising an N type collector layer formed in an N type semiconductor wafer, a P type base layer which is in contact with the N type collector layer at a PN junction that extends to the surface and which contains an N type impurity material of which the energy of combination with vacancies is great and boron is a P type impurity material, and an N type emitter layer which is so formed as to be surrounded by this P type base layer and forms a transistor together with the N type collector layer and the P type base layer and which contains the N type impurity materials phosphorus and arsenic. Arsenic or antimony or the like, which are N type impurity materials of which the energy of combination with vacancies is great are diffused in the P type base layer.

REFERENCES:
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patent: 3507715 (1970-04-01), Kaiser
patent: 3608189 (1971-09-01), Gray
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patent: 3707410 (1972-12-01), Tauchi et al.
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patent: 3798084 (1974-03-01), Lyons
patent: 3834953 (1974-09-01), Nakamura et al.
patent: 3915767 (1975-10-01), Welliver
Edel et al., "Stress Relief by Counter Doping" I.B.M. Tech. Discl. Bull., vol 13, No. 3, Aug. 1970, p. 632. _
Carlsen, G. S., "Multiple Diffusion-from Single Diffusion" Ibid., vol. 9, No. 10, Mar. 1967, pp. 1456-1458.
Fair et al., "Effect of Complex Formation on Diffusion of Arsenic in Silicon" J. Applied Phys., vol. 44, No. 1, Jan. 1973, pp. 273-279. _
Fair, R. B., "Quantitative Theory-Base Diffusion-with Arsenic Emitters" Ibid., vol. 44, No. 1, Jan. 1973, pp. 283-291. _
Saraswat et al., "A New Bipolar Process-Borsenic" IEEE J. of Solid-State Circuits, vol. SC-11, No. 4, pp. 495-500, Aug. 1976. _
Gereth et al., "Localized Enhanced Diffusion in NPN Silicon Structures" J. Electrochem. Soc., vol. 112, No. 3, Mar. 1965, pp 323-329. _

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