Fabrication of three dimensional container diode for use with mu

Details Fabrication of three dimensional container diode for use with mu Fabrication of three dimensional container diode for use with mu

1997-04-30

1999-11-16

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

438129, 438131, 438132, 438524, 438525, H01L 2104

Patent

active

059856980

ABSTRACT:
A vertically oriented diode for use in delivering current to a multi-state memory element in a memory cell. A vertical diode may be disposed in a diode container extending downwardly from a top of a silicon or oxide layer, and may be formed of a combination of silicon and/or metal layers disposed proximate to inner surfaces of a diode container. A multi-state memory element may be formed of a multi-state material, such as a chalcogenide, above a diode to complete a memory cell.

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