Semiconductor device manufacturing: process – Having organic semiconductive component
Patent
1997-03-25
1999-08-31
Niebling, John F.
Semiconductor device manufacturing: process
Having organic semiconductive component
438149, 438158, 438216, 438240, 438287, 438785, H01L 5140
Patent
active
059465514
ABSTRACT:
A thin film transistor (TFT) device structure based on an organic semiconductor material, that exhibits a high field effect mobility, high current modulation and a low sub-threshold slope at lower operating voltages than the current state of the art organic TFT devices. A fabrication process for the same, especially a process for deposition of the gate insulator using chemical solutions. The structure comprises a suitable substrate disposed with the following sequence of features: a set of conducting gate electrodes covered with a high dielectric constant insulator, a layer of the organic semiconductor, sets of electrically conducting source and drain electrodes corresponding to each of the gate lines, and an optional passivation layer that can overcoat and protect the device structure. Use of high dielectric constant gate insulators exploits the unexpected gate voltage dependence of the organic semiconductor to achieve high field effect mobility levels at very low operating voltages. Judicious combinations of the choice of this insulator material and the means to integrate it into the TFT structure are taught that would enable easy fabrication on glass or plastic substrates and the use of such devices in flat panel display applications.
REFERENCES:
patent: 5144473 (1992-09-01), Gemma et al.
patent: 5347144 (1994-09-01), Garnier et al.
Dimitrakopoulos et al., "Molecular Beam Deposited Thin Films of Pentacene for Organic Field Effect Transistor Applications", J. Appl. Phys. 80(4), Aug. 1996, pp. 2501-2508.
Balk, "Dielectrics for Field Effect Technology", Adv. Mater. 1995, 7, No. 8, pp. 703-710.
Brown et al., "Precursor Route Pentacene Metal-Insulator-Semiconductor Field Effect Transistors", J. Appl. Phys. 79(4), Feb. 1996, pp. 2136-2138.
"A Field-Effect Transistor Based on Conjugated Alpha-Sexithienyl", G. Horowitz et al., Solid State Comm., vol. 72, No. 4, 1989, pp. 381-384.
"All-Polymer Field-Effect Transistor Realized by Printing Techniques", F. Garnier et al., Science, vol. 265, Sep. 1994, pp. 1684-1686.
"All-organic field-effect transistors made of .pi.-conjugated oligomers and polymeric insulators", G. Horowitz et al., Synthetic Metals, 54 (1993) pp. 435-445.
Dimitrakopoulos Christos Dimitrios
Duncombe Peter Richard
Furman Bruce K.
Laibowitz Robert B.
Neumayer Deborah Ann
Beck Thomas A.
Niebling John F.
Zarneke David A.
LandOfFree
Fabrication of thin film effect transistor comprising an organic does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Fabrication of thin film effect transistor comprising an organic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication of thin film effect transistor comprising an organic will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2428644