Fabrication of T-shaped metal lines for semiconductor devices

Details Fabrication of T-shaped metal lines for semiconductor devices Fabrication of T-shaped metal lines for semiconductor devices

1984-10-05

1985-08-27

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29579, 29591, 357 15, 148DIG143, H01L 21285

Patent

active

045369429

ABSTRACT:
A method of fabricating MESFET devices having a T-shaped gate electrode is disclosed. The method includes the formation of a single layer of resist material on a semiconductor surface; formation of a resist cavity through optical lithography, the cavity exposing a selected portion of the semiconductor surface; depositing by way of dual-angle evaporation gate walls within said resist cavity, the gate walls defining a T-shaped gate cavity; depositing gate electrode material within the gate cavity, removing the resist material, and removing the gate walls from the gate electrode material.

REFERENCES:
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patent: 4377899 (1983-03-01), Otani et al.
G. O. Ladd Jr et al, "E-Beam Technology for K-Band GaAs FET's", US Army Report EDLET-TR-77-2969-2, Hughes Aircraft Co., Feb. 1980, (pp. 53-57).
Y. Todokoro, "Double-Layer Resist Films for Submicrometer Electron-Beam Lithography", IEEE Trans. Electron Devices, vol. ED-27, pp. 1443-1448, Aug. 1980.
M. Matsumura et al, "Sub-Micrometre Lift-Off Line with T-Shaped Cross-Sectional Form", Electron. Lett, vol. 17, pp. 450-451, Jun. 1981.
K. Kamei et al, "Extremely Low-Noise MESFET's Fabricated by Metal-Organic Chemical Vapour Deposition", Electron. Lett., vol. 17, pp. 450-451, Jun. 1981.
G. C. Taylor et al., "Ion-Implanted K-Band GaAs Power FET", in MTT-S Int. Microwave Symp. Dig., pp. 446-448, 1981.
H. Morkoc et al., "Tungsten/Gold Gate GaAs Microwve FET", Electron. Lett., vol. 14, pp. 514-515, Aug. 1978.
S. Takahashi et al, Sub-Micrometer Gate Fabrication of GaAs MESFET by Plasma Etching", IEEE Trans. Electron Devices, vol. ED-25, pp. 1213-1218, Oct. 1978.

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