Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2007-09-04
2007-09-04
Graybill, David E. (Department: 2822)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S459000, C438S967000
Reexamination Certificate
active
10883437
ABSTRACT:
Methods for fabricating a semiconductor substrate. In an embodiment, the technique includes providing an intermediate support, providing a nucleation layer, and providing at least one bonding layer between the intermediate support and the nucleation layer to improve the bonding energy therebetween, and to form an intermediate assembly. The method also includes providing at least one layer of a semiconductor material upon the nucleation layer, bonding a target substrate to the deposited semiconductor material to form a final support assembly comprising the target substrate, the deposited semiconductor material, and the intermediate assembly, and processing the final support assembly to remove the intermediate assembly. The result is a semiconductor substrate that includes the at least one layer of semiconductor material on the target substrate.
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Ghyselen Bruno
Letertre Fabrice
Rayssac Olivier
Graybill David E.
S.O.I.Tec Silicon on Insulator Technologies
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