Fabrication of submicron semiconductor devices

Details Fabrication of submicron semiconductor devices Fabrication of submicron semiconductor devices

1980-09-15

1982-11-02

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 148 15, 148187, 148188, H01L 2122, H01L 2126

Patent

active

043566235

ABSTRACT:
A method for fabricating a semiconductor device of relatively small scale. A conductivity layer is deposited on a substrate of a polarity. Regions of opposite polarity are partially formed on either side of the conductor layer. Vertical layers are formed to partially cover the regions of opposite polarity and are located adjacent to the conductor layer. Extensions of the regions of opposite polarity are formed such that a portion of the extension is defined by the location of the vertical layers.

REFERENCES:
patent: 3997367 (1976-12-01), Yau
patent: 4109371 (1978-08-01), Shibata
patent: 4160683 (1979-07-01), Roche
patent: 4198250 (1980-04-01), Jecmen
patent: 4204894 (1980-05-01), Komeda et al.
patent: 4209349 (1980-06-01), Ho et al.

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